Abstract

In this paper, the electrical characteristics of resistive thin films and the amplification properties of resistive wall amplifiers are studied based on large signal theory. To optimize amplification performance and reduce interaction length, different frequency bands and operating voltages require films with different electrical properties and thicknesses and a reasonable distribution of the respective lengths of the resistive walls and slow-wave structures. To obtain ZnOx thin films with the required conductivities and thicknesses, reactive DC magnetron sputtering was employed. By controlling the partial pressure of oxygen and the annealing temperature during the preparation process, it is possible to control the number of oxygen deficiencies in the material and the quality of crystallization, which significantly influence the electrical properties. The experiments provide a parameter reference for the preparation of resistive films for millimeter-wave frequency band resistive wall amplifiers.