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Ordered Vacancy Compound Formation at the Interface of Cu... | ResearchHub
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Ordered Vacancy Compound Formation at the Interface of Cu(In,Ga)Se2 Absorber with Sputtered In2S3‐Based Buffers: An Atomic‐Scale Perspective
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Authors
Oana Cojocaru‐Mirédin
10 more
Oana Cojocaru‐Mirédin
•
Dagmar Gerthsen
8 more
•
Wolfram Witte
Published
November 24, 2024
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DOI
10.1002/solr.202400574
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CC-BY-NC-ND
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Topics
Computer Science
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DOI
10.1002/solr.202400574
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