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In-situ fabrication of PtSe2/GaN heterojunction for self-... | ResearchHub
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In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity
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Authors
Ranran Zhuo
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Ranran Zhuo
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Yongtao Tian
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•
Yuen Tsang
Published
September 18, 2018
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Journal
Nano Research
Topics
Physics
Materials Science
Optics
Materials Chemistry
Electronic, Optical And Magnetic Materials
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DOI
10.1007/s12274-018-2200-z
