Abstract

Open AccessCCS ChemistryRESEARCH ARTICLES4 Dec 2024Nucleophilic Attack Enables Crystalline Silicon Formation through Dehydrocoupling at Room Temperature Xuebiao Deng, Tao Zeng, Jun Li, Guoying Yao, Huai Chen, Liangpang Xu, Meiqi Lin, Linfeng Wei, Mohsen Shakouri, Jimmy C. Yu, Ying Wang and Zhenyu Yang Xuebiao Deng , Tao Zeng , Jun Li , Guoying Yao , Huai Chen , Liangpang Xu , Meiqi Lin , Linfeng Wei , Mohsen Shakouri , Jimmy C. Yu , Ying Wang and Zhenyu Yang https://doi.org/10.31635/ccschem.024.202405067 SectionsSupplemental MaterialAboutPDF ToolsAdd to favoritesDownload CitationsTrack Citations ShareFacebookTwitterLinked InEmail Crystalline silicon (c-Si) has been widely used in semiconductor and energy-related industries. A significant challenge in c-Si production is the requirement for high temperatures or highly reactive precursors to promote the Si-Si bond formation. Herein, we demonstrate a new process for preparing c-Si directly from hydrideterminated silicane (HSi) under mild conditions. We design a dehydrocoupling approach that effectively creates Si-Si bonds between HSi flakes via nucleophilic attack by Lewis base reagent at room temperature. c-Si produced through this wet-chemistry process demonstrates promising capabilities in charge carrier migration and separation under visible light irradiation. Compared to all the existing c-Si manufacturing processes, the reported approach drastically reduces the required reaction temperature and provides a new strategy to tailor the electronic and photophysical properties of c-Si for optoelectronic and catalytic applications. Download figure Download PowerPoint Previous articleNext article FiguresReferencesRelatedDetails Issue AssignmentNot Yet AssignedSupporting Information Copyright & Permissions© 2024 Chinese Chemical Society Downloaded 0 times PDF downloadLoading ...