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Improvement in the planarization of 4H-SiC (0001) achieve... | ResearchHub
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Improvement in the planarization of 4H-SiC (0001) achieved by photo-assisted chemical mechanical polishing (P-CMP) using nano TiO 2-based composite abrasive with heterostructure
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Authors
Shi-Dong Chen
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Shi-Dong Chen
•
Hong Lei
Published
December 1, 2024
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Journal
Friction
Topics
Materials Science
Materials Chemistry
Biomedical Engineering
Electrical And Electronic Engineering
Heterojunction
Show all topics
DOI
10.26599/frict.2025.9440993
License
CC-BY
Supporters
Support the authors with ResearchCoin
Tip RSC
Journal
Friction
Topics
Materials Science
Materials Chemistry
Biomedical Engineering
Electrical And Electronic Engineering
Heterojunction
Show all topics
DOI
10.26599/frict.2025.9440993
License
CC-BY
