High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction
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Authors
Ranran Zhuo
Ranran Zhuo•Yuange Wang•Xinjian Li
Published
December 4, 2017
Abstract
Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.
