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3nm GAA Technology featuring Multi-Bridge-Channel FET for... | ResearchHub
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3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications
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Authors
Geum-Jong Bae
35 more
Geum-Jong Bae
•
Dong-il Bae
33 more
•
Hyeonmuk Kang
Published
December 1, 2018
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Journal
2021 IEEE International Electron Devices Meeting (IEDM)
Topics
Computer Science
Materials Science
Physics
Engineering
Quantum Mechanics
Show all topics
DOI
10.1109/iedm.2018.8614629
