Microscopic Modeling of HfO<sub><italic>x</italic></sub> RRAM Operations: From Forming to Switching

Supporters

Support the authors with ResearchCoin

Tip RSC

Journal

IEEE Transactions on Electron Devices

Topics

Engineering

Materials Science

Electrical And Electronic Engineering

Voltage

Resistive Random-Access Memory

Show all topics

DOI

10.1109/ted.2015.2418114