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Impact of 12nm FinFET Technology Variations on TID Effect... | ResearchHub
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Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level
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Authors
Aldo Vidana
•
Nathaniel Dodds
9 more
•
Hugh Barnaby
Published
January 1, 2025
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Journal
IEEE Transactions on Nuclear Science
Topics
Physics
Materials Science
Engineering
Economics
Nuclear Physics
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DOI
10.1109/tns.2025.3528186
