The utilization of perovskite quantum dots (PQDs) in photoelectric devices is indeed an area of intense research due to their advantageous properties such as tunability of visible light and efficient light emission. In this study, mixed CsPbI3 and FAPbI3 PQD dispersions were successfully employed for cation exchange to prepare red-color Cs1−xFAxPbI3 PQD with the photoluminescence (PL) wavelength from 689 nm (x=0) to 778 nm (x=1). It is also found that the aggregation of Cs1−xFAxPbI3 PQD films were strongly dependent on x. When x from 0 to 0.6, the holes in PQD thin films were gradually improved. On the opposite, when x > 0.6, the PQDs thin films returned more and more holes due to an excess of FA+ cations. The resulting Cs1-xFAxPbI3 PQD based light-emitting diodes (LEDs) also demonstrated tunable emission wavelengths, and it is worth mentioning that the maximum external quantum efficiency (EQE) of 11.22% was achieved with an emission wavelength of 758 nm when x=0.6.
