Abstract Highâentropy materials (HEMs) have great potential for energy storage and conversion due to their diverse compositions, and unexpected physical and chemical features. However, highâentropy atomic layers with fully exposed active sites are difficult to synthesize since their phases are easily segregated. Here, it is demonstrated that highâentropy atomic layers of transitionâmetal carbide (HEâMXene) can be produced via the selective etching of novel highâentropy MAX (also termed M n +1 AX n ( n = 1, 2, 3), where M represents an early transitionâmetal element, A is an element mainly from groups 13â16, and X stands for C and/or N) phase (HEâMAX) (Ti 1/5 V 1/5 Zr 1/5 Nb 1/5 Ta 1/5 ) 2 AlC, in which the five transitionâmetal species are homogeneously dispersed into one MX slab due to their solidâsolution feature, giving rise to a stable transitionâmetal carbide in the atomic layers owing to the high molar configurational entropy and correspondingly low Gibbs free energy. Additionally, the resultant highâentropy MXene with distinct lattice distortions leads to high mechanical strain into the atomic layers. Moreover, the mechanical strain can efficiently guide the nucleation and uniform growth of dendriteâfree lithium on HEâMXene, achieving a long cycling stability of up to 1200 h and good deep strippingâplating levels of up to 20 mAh cm â2 .