We study by high-resolution transmission electron microscopy the structuralresponse of bilayer graphene to electron irradiation with energies below theknock-on damage threshold of graphene. We observe that one type of divacancy,which we refer to as the butterfly defect, is formed for radiation energies anddoses for which no vacancies are formed in clean monolayer graphene. By usingfirst principles calculations based on density-functional theory, we analyzetwo possible causes related with the presence of a second layer that couldexplain the observed phenomenon: an increase of the defect stability or acatalytic effect during its creation. For the former, the obtained formationenergies of the defect in monolayer and bilayer systems show that the change instability is negligible. For the latter, ab initio molecular dynamicssimulations indicate that the threshold energy for direct expulsion does notdecrease in bilayer graphene as compared with monolayer graphene, and wedemonstrate the possibility of creating divacancies through catalyzedintermediate states below this threshold energy. The estimated cross sectionagrees with what is observed experimentally. Therefore, we show the possibilityof a catalytic pathway for creating vacancies under electron radiation belowthe expulsion threshold energy.