Abstract

Angewandte Chemie International EditionVolume 42, Issue 33 p. 3900-3903 Communication Building Blocks for n-Type Organic Electronics: Regiochemically Modulated Inversion of Majority Carrier Sign in Perfluoroarene-Modified Polythiophene Semiconductors† Antonio Facchetti Dr., Antonio Facchetti Dr. Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this authorMyung-Han Yoon, Myung-Han Yoon Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this authorCharlotte L. Stern Dr., Charlotte L. Stern Dr. Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this authorHoward E. Katz Dr., Howard E. Katz Dr. Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USASearch for more papers by this authorTobin J. Marks Prof. Dr., Tobin J. Marks Prof. Dr. [email protected] Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this author Antonio Facchetti Dr., Antonio Facchetti Dr. Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this authorMyung-Han Yoon, Myung-Han Yoon Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this authorCharlotte L. Stern Dr., Charlotte L. Stern Dr. Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this authorHoward E. Katz Dr., Howard E. Katz Dr. Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USASearch for more papers by this authorTobin J. Marks Prof. Dr., Tobin J. Marks Prof. Dr. [email protected] Department of Chemistry and, the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208-3113, USA, Fax: (+1) 847-491-2290Search for more papers by this author First published: 22 August 2003 https://doi.org/10.1002/anie.200351253Citations: 392 † We thank DARPA (N00421-98-1187), ONR (N00014-02-1-0909), and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-0076097) for support of this research. Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract A new family of perfluoroarene-modified thiophene semiconductors 1–3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2 V−1 s−1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies. Citing Literature Supporting Information Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2002/2003/z51253_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume42, Issue33August 25, 2003Pages 3900-3903 RelatedInformation