The top gate self‐alignment (TGSA) Praseodymium‐doped indium zinc oxide (PrIZO) thin film transistor (TFT) was fabricated with different process condition in our production line, and high field effect mobility of 40.83 cm 2 V ‐1 s ‐1 was obtained by regulating the GI and ILD parameters. At the same time, the devices show excellent stability with PBTS of 0.52 V and NBTIS of ‐0.9 V, indicating its potential in overcoming the trade‐off between mobility and reliability.

P‐13: Excessive Oxygen induced Threshold Voltage Shifts in High Mobility Top‐Gate PrIZO TFTs